A1360, A1361,
and A1362
To construct a current sensor using the A136x, first consider a
current carrying wire that we want to observe. As dictated by
Amperes Law, a magnetic field is produced around the wire
that is proportional to the amount of current flowing through
the wire. By passing this wire through a soft magnetic core, the
magnetic flux produced by the wire can be concentrated and
directed through a gap in the core. The magnetic flux density can
be measured by inserting the A136x SIP into the gap in the core.
As a result, the output of the A136x device will be proportional
to the amount of current flowing through the wire.
The example feedthrough current sensing setup shown below
(figure 7) has a core made of mu metal that is 2 mm thick
and 4 mm wide. The inner radius of the core is 14.5 mm and
the outer radius is 18.5 mm. The wire going through the center
of the core has a radius of 9 mm. Using this setup with a gap of
1.7 mm, a field strength results that is on the order of 7 G / A at
the Hall element in the A136x.
The recommended core material for construction of the concen-
trator depends on the specific application. If high flux saturation
is desired, then an alloy such as HyPerm49 is recommended.
For lower-current level sensing applications, a material such as
HyMu80 may be desired. (HyMu80 has lower magnetic flux
saturation than HyPerm49, therefore more HyMu80 mate-
rial is required to carry the same amount of flux compared
to Hyperm49.) If frequency response is a concern, then eddy
currents can be reduced by either laminating the HyPerm49 or
HyMu80 alloys, or by using a ferrite core.
Constructing a Current Sensor Using the A136x
?8 mm
4 mm
2 mm
?7 mm
Application-specific housing
Ring concentrator
Current-conducting wire
A136x
Center Hall element in gap
1.7 mm
Figure 7. The example current sensor setup used to generate the data in this section was
constructed with a split-ring concentrator and an A136x device. A copper wire was fed
through the concentrator, and the A136x placed in its gap. This approximates a typical
ammeter application on a thick wire, such as shown in the left view. Note that such
applications usually have a protective housing, which should be taken into consideration
when designing the  nal application. The housing is beyond the scope of this example.
Low-Noise Programmable Linear Hall Effect Sensor ICs with
Adjustable Bandwidth (50 kHz Maximum) and Analog Output
22
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
相关PDF资料
A1374EKB-T IC SENSOR HALL EFFECT PREC 3-SIP
A1422LK IC SENSOR HALL EFFECT AC 4-SIP
A1425LK IC SENSOR HALL EFFECT AC 4-SIP
A1645LK-I2 IC SENSOR HALL EFFECT AC 4-SIP
A3230LUA-T IC SW HALL EFFECT CHOPPER 3-SIP
A3241LUA-T IC SWITCH HALL EFFECT 3-SIP
A3245LLHLT-T IC SW HALL EFFECT OMNI SOT23W
A3251LUA-T IC SW HALL EFFECT UNI 3-SIP
相关代理商/技术参数
A1362LKTTN-T 功能描述:IC HALL EFFECT SENSOR LN 4-SIP RoHS:是 类别:传感器,转换器 >> 磁性 - 霍尔效应,数字式开关,线性,罗盘 (IC) 系列:- 标准包装:1 系列:- 传感范围:20mT ~ 80mT 类型:旋转 电源电压:4.5 V ~ 5.5 V 电流 - 电源:15mA 电流 - 输出(最大):- 输出类型:数字式,PWM,8.5 位串行 特点:可编程 工作温度:-40°C ~ 150°C 封装/外壳:20-SSOP(0.209",5.30mm 宽) 供应商设备封装:20-SSOP 包装:Digi-Reel® 其它名称:AS5132-HSST-500DKR
A1363LKTTN-10-T 功能描述:IC HALL SENSOR 6.4-14MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带(CT) 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源(最大值):15mA 电流 - 输出(最大值):10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C(TA) 特性:可编程,温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:4-SIP 标准包装:1
A1363LKTTN-1-T 功能描述:IC HALL SENSOR 0.6-1.3MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带(CT) 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源(最大值):15mA 电流 - 输出(最大值):10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C(TA) 特性:可编程,温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:模块 标准包装:1
A1363LKTTN-2-T 功能描述:IC HALL SENSOR 1.3-2.9MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带(CT) 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源(最大值):15mA 电流 - 输出(最大值):10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C(TA) 特性:可编程,温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:4-SIP 标准包装:1
A1363LKTTN-5-T 功能描述:IC HALL SENSOR 2.9-6.4MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带(CT) 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源(最大值):15mA 电流 - 输出(最大值):10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C(TA) 特性:可编程,温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:4-SIP 标准包装:1
A1363LLUTR-10-T 功能描述:IC HALL EFFECT SENSOR LN 8TSSOP 制造商:allegro microsystems, llc 系列:- 包装:剪切带(CT) 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源(最大值):15mA 电流 - 输出(最大值):10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C(TA) 特性:可编程,温度补偿 封装/外壳:8-TSSOP(0.173",4.40mm 宽) 供应商器件封装:8-TSSOP 标准包装:1
A1363LLUTR-1-T 功能描述:IC HALL EFFECT SENSOR LN 8TSSOP 制造商:allegro microsystems, llc 系列:- 包装:剪切带(CT) 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源(最大值):15mA 电流 - 输出(最大值):10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C(TA) 特性:可编程,温度补偿 封装/外壳:8-TSSOP(0.173",4.40mm 宽) 供应商器件封装:8-TSSOP 标准包装:1
A1363LLUTR-2-T 功能描述:IC HALL EFFECT SENSOR LN 8TSSOP 制造商:allegro microsystems, llc 系列:- 包装:剪切带(CT) 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源(最大值):15mA 电流 - 输出(最大值):10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C(TA) 特性:可编程,温度补偿 封装/外壳:8-TSSOP(0.173",4.40mm 宽) 供应商器件封装:8-TSSOP 标准包装:1